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1. product profile 1.1 general description small-signal p-channel enhancement mode fiel d-effect transistor (fet) using trench mosfet technology and ultra low v f maximum efficiency general application (mega) schottky diode combined in a small and leadless ultra thin sot1118 surface-mounted device (smd) plastic package. 1.2 features and benefits ? trench mosfet technology ? integrated ultra low v f mega schottky diode ? 1 kv electrostatic discharge (esd) protection ? small and leadless ultra thin smd plastic package: 2 2 0.65 mm ? exposed drain pad for excellent thermal conduction 1.3 applications ? charging switch for portable devices ? dc-to-dc converters ? power management in battery-driven portables ? hard disk and computing power management 1.4 quick reference data PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination rev. 1 ? 9 march 2011 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit mosfet transistor v ds drain-source voltage t amb =25 c-- ? 20 v v gs gate-source voltage t amb =25 c-- 8v i d drain current t amb =25 c; v gs = ? 4.5 v [1] -- ? 3.5 a r dson drain-source on-state resistance t j =25 c; v gs = ? 4.5 v; i d = ? 1a [2] -5870m
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 2 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination [1] device mounted on an fr4 printed-circuit board (pcb) , single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . [2] pulse test: t p 300 s; ? 0.01. 2. pinning information 3. ordering information 4. marking schottky diode i f forward current t sp 133 c--2a v r reverse voltage t amb =25 c--20v v f forward voltage t amb =25 c; i f =1a - 320 365 mv table 1. quick reference data ?continued symbol parameter conditions min typ max unit table 2. pinning pin symbol description simplified outline graphic symbol 1 a anode 2 n.c. not connected 3 d drain 4s source 5 g gate 6 k cathode 7 k cathode 8 d drain transparent top view 6 78 54 123 017aaa08 1 s d g a k table 3. ordering information type number package name description version PMFPB6532UP huson6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 2 0.65 mm sot1118 table 4. marking codes type number marking code PMFPB6532UP 1b
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 3 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination 5. limiting values [1] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 6 cm 2 . [2] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. [3] measured between all pins. [4] t j =25 c prior to surge. [5] calculated from square-wave measurements; t j =25 c prior to surge. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit mosfet transistor v ds drain-source voltage t amb =25 c- ? 20 v v gs gate-source voltage t amb =25 c- 8v i d drain current v gs = ? 4.5 v [1] t amb =25 c- ? 3.5 a t amb =100 c- ? 2.7 a i dm peak drain current t amb =25 c; single pulse; t p 10 s - ? 20 a p tot total power dissipation t amb =25 c [2] -520mw [1] -1.25w t sp =25 c-8.3w source-drain diode i s source current t amb =25 c [1] - ? 1.4 a esd maximum rating v esd electrostatic discharge voltage human body model; c=100pf; r=1.5k [3] - 1000 v schottky diode v r reverse voltage t amb =25 c-20v i f forward current t sp 133 c-2a i frm repetitive peak forward current t p 1 ms; ? 0.25; t amb =25 c -7a i fsm non-repetitive peak forward current t p = 8 ms; square wave [4] -18a t p = 8 ms; half-sine wave [5] -25a p tot total power dissipation t amb =25 c [2] -480mw [1] - 1190 mw t sp =25 c-8.3w per device t j junction temperature - 150 c t amb ambient temperature ? 55 +150 c t stg storage temperature ? 65 +150 c
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 4 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination fig 1. mosfet transistor: normalized total power dissipation as a function of ambient temperature fig 2. mosfet transistor: normalized continuous drain current as a function of ambient temperature i dm = single pulse (1) t p = 100 s (2) t p =1ms (3) t p =10ms (4) dc; t sp =25 c (5) t p = 100 ms (6) dc; t amb =25 c; drain mounting pad 6 cm 2 fig 3. mosfet transistor: safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage t amb ( c) ? 75 175 125 25 75 ? 25 017aaa001 40 80 120 p der (%) 0 t amb ( c) ? 75 175 125 25 75 ? 25 017aaa002 40 80 120 i der (%) 0 p der p tot p tot 25 c () ----------------------- - 100 % = i der i d i d25 c () ------------------- - 100 % = 017aaa066 ? 1 ? 10 ? 1 ? 10 ? 10 2 i d (a) ? 10 ? 2 v ds (v) ? 10 ? 1 ? 10 2 ? 10 ? 1 (1) (2) (3) (4) (5) (6) limit r dson = v ds /i d
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 5 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination 6. thermal characteristics [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 6 cm 2 . table 6. thermal characteristics symbol parameter conditions min typ max unit mosfet transistor r th(j-a) thermal resistance from junction to ambient in free air [1] - - 240 k/w [2] - - 100 k/w r th(j-sp) thermal resistance from junction to solder point --15k/w schottky diode r th(j-a) thermal resistance from junction to ambient in free air [1] - - 260 k/w [2] - - 105 k/w r th(j-sp) thermal resistance from junction to solder point --15k/w fr4 pcb, standard footprint fig 4. mosfet transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa067 t p (s) 10 ? 3 10 2 10 3 10 1 10 ? 2 10 ? 1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 6 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination fr4 pcb, mounting pad for drain 6 cm 2 fig 5. mosfet transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values fr4 pcb, standard footprint fig 6. schottky diode: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa068 t p (s) 10 ? 3 10 2 10 3 10 1 10 ? 2 10 ? 1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 017aaa082 t p (s) 10 ? 3 10 2 10 3 10 1 10 ? 2 10 ? 1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 7 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination 7. characteristics fr4 pcb, mounting pad for cathode 6 cm 2 fig 7. schottky diode: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa083 t p (s) 10 ? 3 10 2 10 3 10 1 10 ? 2 10 ? 1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 table 7. characteristics t j =25 c unless otherwise specified. symbol parameter conditions min typ max unit mosfet transistor static characteristics v (br)dss drain-source breakdown voltage i d = ? 250 a; v gs =0v ? 20--v v gs(th) gate-source threshold voltage i d = ? 250 a; v ds =v gs ? 0.4 ? 0.7 ? 1v i dss drain leakage current v ds = ? 16 v; v gs =0v t j =25 c-- ? 1 a t j = 150 c-- ? 10 a i gss gate leakage current v gs = 8v; v ds =0v - 1 10 a r dson drain-source on-state resistance [1] v gs = ? 4.5 v; i d = ? 1a - 5870m v gs = ? 4.5 v; i d = ? 1a; t j = 150 c - 80 100 m v gs = ? 2.5 v; i d = ? 1a - 7290m v gs = ? 1.8 v; i d = ? 0.5 a - 100 165 m g fs forward transconductance v ds = ? 5v; i d = ? 1a [1] -8-s
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 8 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination [1] pulse test: t p 300 s; ? 0.01. dynamic characteristics q g(tot) total gate charge i d = ? 3.3 a; v ds = ? 10 v; v gs = ? 4.5 v -4.56nc q gs gate-source charge - 0.8 - nc q gd gate-drain charge - 1 - nc c iss input capacitance v gs =0v; v ds = ? 10 v; f=1mhz - 380 - pf c oss output capacitance - 72 - pf c rss reverse transfer capacitance -61-pf t d(on) turn-on delay time v ds = ? 15 v; r l =15 ; v gs = ? 10 v; r g =6 -5-ns t r rise time - 10 - ns t d(off) turn-off delay time - 57 - ns t f fall time - 35 - ns source-drain diode v sd source-drain voltage i s = ? 1.3 a; v gs =0v - ? 0.75 ? 1v schottky diode v f forward voltage i f = 100 ma - 225 275 mv i f = 500 ma - 285 335 mv i f = 1 a - 320 365 mv i r reverse current v r = 5 v - 65 220 a v r =5v; t j =125 c - 13 50 ma v r = 10 v - 110 400 a v r = 20 v - 230 700 a c d diode capacitance v r =5v; f=1mhz - 6070pf table 7. characteristics ?continued t j =25 c unless otherwise specified. symbol parameter conditions min typ max unit
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 9 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination t amb =25 ct amb =25 c; v ds = ? 5v (1) minimum values (2) typical values (3) maximum values fig 8. mosfet transistor: output characteristics: drain current as a function of drain-source voltage; typical values fig 9. mosfet transistor: sub-threshold drain current as a function of gate-source voltage t amb =25 c (1) v gs = ? 1.5 v (2) v gs = ? 1.6 v (3) v gs = ? 1.8 v (4) v gs = ? 2v (5) v gs = ? 2.5 v (6) v gs = ? 4.5 v i d = ? 1a (1) t amb = 150 c (2) t amb =25 c fig 10. mosfet transistor: drain-source on-state resistance as a function of drain current; typical values fig 11. mosfet transistor: drain-source on-state resistance as a function of gate-source voltage; typical values v ds (v) 0.0 ? 4.0 ? 3.0 ? 1.0 ? 2.0 017aaa069 ? 4.0 ? 6.0 ? 2.0 ? 8.0 ? 10.0 i d (a) 0.0 ? 2.0 v ? 1.8 v ? 1.6 v ? 1.4 v v gs = ? 3.0 v ? 2.4 v ? 2.2 v 017aaa070 v gs (v) 0.0 ? 1.2 ? 0.8 ? 0.4 ? 10 ? 4 ? 10 ? 3 i d (a) ? 10 ? 5 (2) (1) (3) i d (a) ? 1.0 ? 6.0 ? 5.0 ? 3.0 ? 4.0 ? 2.0 017aaa071 0.10 0.05 0.15 0.20 r dson ( ) 0.0 (1) (2) (3) (4) (5) (6) 017aaa072 v gs (v) 0.0 ? 6.0 ? 4.0 ? 2.0 0.10 0.05 0.15 0.20 r dson ( ) 0.0 (1) (2)
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 10 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination v ds >i d r dson (1) t amb =25 c (2) t amb = 150 c fig 12. mosfet transistor: transfer characteristics: drain current as a function of gate-source voltage; typical values fig 13. mosfet transistor: normalized drain-source on-state resistance as a function of ambient temperature; typical values i d = ? 0.25 ma; v ds =v gs (1) maximum values (2) typical values (3) minimum values f=1mhz; v gs =0v (1) c iss (2) c oss (3) c rss fig 14. mosfet transistor: gate-source threshold voltage as a function of ambient temperature fig 15. mosfet transistor: input, output and reverse transfer capacitances as a function of drain-source voltage; typical values v gs (v) 0.0 ? 2.0 ? 1.5 ? 0.5 ? 1.0 017aaa073 ? 2.0 ? 4.0 ? 6.0 i d (a) 0.0 (1) (2) (2) (1) t amb ( c) ? 60 180 120 060 017aaa074 1.0 0.5 1.5 2.0 a 0.0 a r dson r dson 25 c () ----------------------------- = t amb ( c) ? 60 180 120 060 017aaa075 ? 0.5 ? 1.0 ? 1.5 v gs(th) (v) 0.0 (2) (1) (3) 017aaa076 v ds (v) ? 10 ? 1 ? 10 2 ? 10 ? 1 10 2 10 3 c (pf) 10 (2) (1) (3)
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 11 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination i d = ? 3.3 a; v ds = ? 10 v; t amb =25 c fig 16. mosfet transistor: gate-source voltage as a function of gate charge; typical values fig 17. mosfet transistor: gate charge waveform definitions v gs =0v (1) t amb = 150 c (2) t amb =25 c fig 18. mosfet transistor: source current as a function of source-drain voltage; typical values q g (nc) 0.0 5.0 3.75 1.25 2.5 017aaa077 ? 2.0 ? 3.0 ? 1.0 ? 4.0 ? 5.0 v gs (v) 0.0 003aaa50 8 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) v sd (v) 0.0 ? 1.2 ? 0.8 ? 0.4 017aaa078 ? 2.0 ? 4.0 ? 6.0 i s (a) 0.0 (1) (2)
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 12 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination (1) t j = 150 c (2) t j = 125 c (3) t j =85 c (4) t j =25 c (5) t j = ? 40 c (1) t j = 125 c (2) t j =85 c (3) t j =25 c (4) t j = ? 40 c fig 19. schottky diode: forward current as a function of forward voltage; typical values fig 20. schottky diode: reverse current as a function of reverse voltage; typical values f=1mhz; t amb =25 c fr4 pcb, mounting pad for cathode 6 cm 2 t j = 150 c (1) =1; dc (2) = 0.5; f = 20 khz (3) = 0.2; f = 20 khz (4) = 0.1; f = 20 khz fig 21. schottky diode: diode capacitance as a function of reverse voltage; typical values fig 22. schottky diode: average forward current as a function of ambient temperature; typical values v f (v) 0.0 1.0 0.8 0.4 0.6 0.2 017aaa084 10 ? 2 10 ? 1 10 ? 3 1 10 i f (a) 10 ? 4 (1) (2) (3) (4) (5) 017aaa085 1 10 ? 1 10 ? 2 10 ? 3 10 ? 4 10 ? 5 10 ? 6 i r (a) 10 ? 7 v r (v) 020 15 510 (1) (2) (3) (4) v r (v) 020 15 510 017aaa086 100 150 50 200 250 c d (pf) 0 t amb ( c) 0 50 100 150 175 125 75 25 017aaa087 0.8 1.6 2.4 i f(av) (a) 0.0 (1) (2) (3) (4)
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 13 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination 8. test information fig 23. duty cycle definition t 1 t 2 p t 006aaa812 duty cycle = t 1 t 2
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 14 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination 9. package outline fig 24. package outline sot1118 references outline version european projection issue date iec jedec jeita sot1118 - - - sot1118_po 10-08-03 10-08-16 unit mm max nom min 0.65 0.04 2.1 1.9 0.77 0.57 2.1 1.9 1.1 0.9 0.54 0.44 0.3 0.2 0.05 a (1) dimensions note 1. dimension including plating thickness. h uson6: plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm sot111 8 a 1 b p 0.35 0.25 dd 1 ee 1 e 0.65 e 1 l p v 0.1 yy 1 0.05 0 1 2 mm scale terminal 1 index area b a d e detail x a 1 a d 1 e 1 l p e 1 e terminal 1 index area 1 3 6 4 b p b a v x c y c y 1 (8 )
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 15 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination 10. soldering reflow soldering is the only recommended soldering method. fig 25. reflow soldering footprint sot1118 sot1118_ fr dimensions in mm solder paste solder resist occupied area solder lands 0.49 0.49 0.65 0.65 0.875 0.875 2.25 0.35 (6 ) 0.3 (6 ) 0.4 (6 ) 0.45 (6 ) 0.72 (2 ) 0.82 (2 ) 1.05 (2 ) 1.15 (2 ) 2.1
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 16 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination 11. revision history table 8. revision history document id release date data sheet status change notice supersedes PMFPB6532UP v.1 20110309 product data sheet - -
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 17 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? 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stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
PMFPB6532UP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 9 march 2011 18 of 19 nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors PMFPB6532UP 20 v, 3.5 a / 320 mv v f p-channel mosfet-schottky combination ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 9 march 2011 document identifier: PMFPB6532UP please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 5 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 13 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 17 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 13 contact information. . . . . . . . . . . . . . . . . . . . . 18 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

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